The Influence of Bath Temperature on the Properties of SILAR Deposited Cobalt Selenide Thin Films
Received: 29 April 2021 | Revised: 14 May 2021 and 31 May 2021 and 8 June 2021 | Accepted: 24 June 2021 | Online: 21 August 2021
In this paper, cobalt selenide thin films have been deposited onto glass slides with the SILAR method under various bath temperatures. The structure, optical properties, and morphology of thin films were investigated. The X-ray diffraction patterns confirmed that the number of peak intensities increased with increasing bath temperature. From the AFM images, bigger sizes and thicker films were observed for the films prepared at 80°C. The average grain size was estimated to be 0.2µm, 0.15µm, and 0.25µm when the bath temperature was 40°C, 50°C, and 80°C respectively. The highest absorbance value was observed for films prepared at 80°C. The band gap values range from 2eV to 2.4eV.
Keywords:thin films, cobalt selenide, semiconductor, band gap, solar cells, SILAR technique
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