Design of a 5-17 GHz Wideband GaAs Low Noise Amplifier with Capacitive Feedback

Authors

  • K. Sowjanya Department of Electronics and Communication Engineering, Central University of Karnataka, Kalaburagi, India
  • Paramesha Department of Electronics and Communication Engineering, Central University of Karnataka, Kalaburagi, India
  • P. Shanthi Department of Electronics and Telecommunication Engineering, RV College of Engineering, Bengaluru, India
  • K. Sreelakshmi Department of Electronics and Telecommunication Engineering, RV College of Engineering, Bengaluru, India
Volume: 15 | Issue: 3 | Pages: 23972-23977 | June 2025 | https://doi.org/10.48084/etasr.10879

Abstract

This paper presents a two-stage broadband Low Noise Amplifier (LNA) that uses a matching network and source degeneration technique, combined with Capacitive Feedback (CFB). The novelty of the design is the integration of CFB and source degeneration, in order to achieve a flat, wideband gain while maintaining a low Noise Figure (NF). The proposed LNA has its foundation in GaAs pHEMT technology and is simulated using the Keysight ADS software. The simulation results demonstrate that the LNA delivers a consistent gain of 23 dB and NF below 1.016 dB, while maintaining excellent input and output reflection coefficients of <-8 dB, across the operating range of 5 - 17 GHz.

Keywords:

LNA, pHEMT, Noise Figure (NF), two-stage, capacitive feedback

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How to Cite

[1]
Sowjanya, K., Paramesha, ., Shanthi, P. and Sreelakshmi, K. 2025. Design of a 5-17 GHz Wideband GaAs Low Noise Amplifier with Capacitive Feedback. Engineering, Technology & Applied Science Research. 15, 3 (Jun. 2025), 23972–23977. DOI:https://doi.org/10.48084/etasr.10879.

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