Ab Initio Study of the Effect of Sulphur Concentration on the Structural, Electronic and Optical Properties of CuIn(Se1-xSx)2 Compound using Generalized Gradient Approximation

Authors

  • Moussa Merabet Electronics Department, Faculty of Technology, University Ferhat Abbas of Setif 1, Algeria | Research Unit on Emerging Materials (RUEM), University Ferhat Abbas of Setif 1, Algeria
  • Idris Bouchama Electronics Department, Faculty of Technology, University of Msila, Algeria | Research Unit on Emerging Materials (RUEM), University Ferhat Abbas of Setif 1, Algeria
  • Tayeb Chihi Research Unit on Emerging Materials (RUEM), University Ferhat Abbas of Setif 1, Algeria
  • Lamis Foudia Research Unit on Emerging Materials (RUEM), University Ferhat Abbas of Setif 1, Algeria
  • Faycal Saidi Electronics Department, Faculty of Technology, University of Ferhat Abbas Setif 1, Algeria | Research Unit on Emerging Materials (RUEM), University Ferhat Abbas of Setif 1, Algeria
  • Nadir Bouarissa Laboratory of Material Physics and its Applications, University of Msila, Algeria
Volume: 15 | Issue: 3 | Pages: 24026-24034 | June 2025 | https://doi.org/10.48084/etasr.10785

Abstract

CuInSe2 (CIS) is a very promising material for thin film solar cells due to its unique optoelectronic properties. Sulfur (S) loading has been examined as an improvement to its performance. In this study, Density Functional Theory (DFT) calculations were used to evaluate the effect of S doping on the structural, electrical, and optical properties of CuIn (Se1-xSx)2. The results show that S doping causes significant changes in the band structure and defect formation energy. The results obtained provide important insights into the potential of S-doped CIS as a high efficiency material for the fabrication of optoelectronic and photovoltaic devices.

Keywords:

chalcopyrite, CuIn(Se1-xSx)2, CASTEP, GGA-PBE approximation, thin-film solar cells, structural and electronic properties

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References

W.-J. Wang et al., "Synthesis of CuInSe2 monodisperse nanoparticles and the nanorings shape evolution via a green solution reaction route," Materials Science in Semiconductor Processing, vol. 15, no. 5, pp. 467–471, Oct. 2012.

S. Cui, W. Feng, H. Hu, Z. Feng, and Y. Wang, "Structural and electronic properties of ZnO under high pressure," Journal of Alloys and Compounds, vol. 476, no. 1, pp. 306–310, May 2009.

A. M. Fernández and R. N. Bhattacharya, "Electrodeposition of CuIn1−xGaxSe2 precursor films: optimization of film composition and morphology," Thin Solid Films, vol. 474, no. 1, pp. 10–13, Mar. 2005.

D. A. Tuan, P. Vu, and N. V. Lien, "Design and Control of a Three-Phase T-Type Inverter using Reverse-Blocking IGBTs," Engineering, Technology & Applied Science Research, vol. 11, no. 1, pp. 6614–6619, Feb. 2021.

A. S. Al-Ezzi, M. N. M. Ansari, and N. Tan, "Flexible and freestanding solar cells based on metal organic chemical vapour deposition- grown graphene," Chemical Papers, vol. 79, no. 4, pp. 2019–2036, Apr. 2025.

A. S. I. Al-Ezzi and M. N. M. Ansari, "Analytical modelling and performance study of single-junction GaAs-based solar cell efficiency," Journal of the Korean Physical Society, vol. 86, no. 3, pp. 245–262, Feb. 2025.

A. S. Al-Ezzi and M. N. M. Ansari, "Numerical analysis and performance study of a double-heterojunction GaAs-based solar cell," Journal of Computational Electronics, vol. 23, no. 2, pp. 358–368, Apr. 2024.

J. Xiao, Y. Xie, Y. Xiong, R. Tang, and Y. Qian, "A mild solvothermal route to chalcopyrite quaternary semiconductor CuIn(SexS1 − x)2 nanocrystallites," Journal of Materials Chemistry, vol. 11, no. 5, pp. 1417–1420, Jan. 2001.

S. Bandyopadhyaya, S. Roy, S. Chaudhuri, and A. K. Pal, "CuIn(SxSe1−x)2 films prepared by graphite box annealing of In/Cu stacked elemental layers," Vacuum, vol. 62, no. 1, pp. 61–73, May 2001.

G. Wang et al., "Preparation of CuIn(SxSe1-x)2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe2," Journal of Materials Research, vol. 25, no. 12, pp. 2426–2429, Dec. 2010.

C. Xiang, Z. Yujun, Y. Ruohe, and H. Julong, "Impact of lattice volume on the band gap broadening of isovalent S-doped CuInSe2," Journal of Semiconductors, vol. 29, no. 10, pp. 1883–1888, 2008.

C. J. Sheppard, V. Alberts, and J. R. Botha, "Structural and optical characterization of single-phase CuIn(Se,S)2 thin films deposited using a two-step process," Physica Status Solidi C, vol. 5, no. 2, pp. 641–644, 2008.

K. Zeaiter and C. Llinarès, "Optical properties of the quaternary alloy system Culn(SxSe1−x)2 investigated by spectroscopic ellipsometry," Journal of Applied Physics, vol. 86, no. 12, pp. 6822–6825, Dec. 1999.

M. D. Segall et al., "First-principles simulation: ideas, illustrations and the CASTEP code," Journal of Physics: Condensed Matter, vol. 14, no. 11, Mar. 2002, Art. no. 2717.

S. J. Clark et al., "First principles methods using CASTEP," Zeitschrift für Kristallographie - Crystalline Materials, vol. 220, no. 5–6, pp. 567–570, May 2005.

J. P. Perdew, K. Burke, and M. Ernzerhof, "Generalized Gradient Approximation Made Simple," Physical Review Letters, vol. 77, no. 18, pp. 3865–3868, Oct. 1996.

E. Kask, M. Grossberg, R. Josepson, P. Salu, K. Timmo, and J. Krustok, "Defect studies in Cu2ZnSnSe4 and Cu2ZnSn(Se0.75S0.25)4 by admittance and photoluminescence spectroscopy," Materials Science in Semiconductor Processing, vol. 16, no. 3, pp. 992–996, Jun. 2013.

M. A. Contreras, H. Wiesner, J. Tuttle, K. Ramanathan, and R. Noufi, "Issues on the chalcopyrite/defect-chalcopyrite junction model for high-efficiency Cu(In,Ga)Se2 solar cells " Solar Energy Materials and Solar Cells, vol. 49, no. 1, pp. 239–247, Dec. 1997.

R. Herberholz, V. Nadenau, U. Rühle, C. Köble, H. W. Schock, and B. Dimmler, "Prospects of wide-gap chalcopyrites for thin film photovoltaic modules," Solar Energy Materials and Solar Cells, vol. 49, no. 1, pp. 227–237, Dec. 1997.

J. Pohl and K. Albe, "Thermodynamics and kinetics of the copper vacancy in CuInSe2, CuGaSe2, CuInS2, and CuGaS2 from screened-exchange hybrid density functional theory," Journal of Applied Physics, vol. 108, no. 2, Jul. 2010, Art. no. 023509.

D. Vanderbilt, "Soft self-consistent pseudopotentials in a generalized eigenvalue formalism," Physical Review B, vol. 41, no. 11, pp. 7892–7895, Apr. 1990.

H. J. Monkhorst and J. D. Pack, "Special points for Brillouin-zone integrations," Physical Review B, vol. 13, no. 12, pp. 5188–5192, Jun. 1976.

F. D. Murnaghan, "The Compressibility of Media under Extreme Pressures," Proceedings of the National Academy of Sciences, vol. 30, no. 9, pp. 244–247, Sep. 1944.

F. C. Wan et al., "First-principles investigation of the optical properties of CuIn(SxSe1–x)2," Materials Science in Semiconductor Processing, vol. 16, no. 6, pp. 1422–1427, Dec. 2013.

V. L. Shaposhnikov, A. V. Krivosheeva, V. E. Borisenko, J.-L. Lazzari, and F. A. d’Avitaya, "Ab initio modeling of the structural, electronic, and optical properties of AIIBIVC2V semiconductors," Physical Review B, vol. 85, no. 20, May 2012, Art. no. 205201.

P. Nayebi, K. Mirabbaszadeh, and M. Shamshirsaz, "Density functional theory of structural, electronic and optical properties of CuXY2 (X=In, Ga and Y=S, Se) chalcopyrite semiconductors," Physica B: Condensed Matter, vol. 416, pp. 55–63, May 2013.

B. I. Adetunji, "Pressure effect on the structural and electronic properties of CuInS2," Solid State Sciences, vol. 55, pp. 42–47, May 2016.

E. Mazalan, M. S. A. Aziz, N. A. S. Amin, F. D. Ismail, M. S. Roslan, and K. Chaudhary, "First-principles study on crystal structures and bulk modulus of CuInX2 (X = S, Se, S-Se) solar cell absorber," Journal of Physics: Conference Series, vol. 2432, no. 1, Feb. 2023, Art. no. 012009.

J.-W. Yang and L. An, "First-principles determination of pressure-induced structure, anisotropic elasticity and ideal strengths of CuInS2 and CuInSe2," Solid State Communications, vol. 316–317, Aug. 2020, Art. no. 113952.

H. L. Hwang, C. Y. Sun, C. Y. Leu, C. L. Cheng, and C. C. Tu, "Growth of CuInS2 and its characterization," Revue de Physique Appliquée, vol. 13, no. 12, 1978, Art. no. 745.

M. L. Fearheiley, K. J. Bachmann, Y.-H. Shing, S. A. Vasquez, and C. R. Herrington, "The lattice constants of CuInSe2," Journal of Electronic Materials, vol. 14, no. 6, pp. 677–683, Nov. 1985.

T. Tinoco, A. Polian, D. Gomez, and J. P. Itie, "Structural Studies of CuInS2 and CuInSe2 under High Pressure," Physica Status Solidi (b), vol. 198, no. 1, pp. 433–438, 1996.

M. Belhadj, A. Tadjer, B. Abbar, Z. Bousahla, B. Bouhafs, and H. Aourag, "Structural, electronic and optical calculations of Cu(In,Ga)Se2 ternary chalcopyrites," physica status solidi (b), vol. 241, no. 11, pp. 2516–2528, 2004.

A. Sajid, S. Sibghat-Ullah, G. Murtaza, R. Khenata, A. Manzar, and S. B. Omran, "Electronic structure and optical properties of chalcopyrite CuYZ2 (Y=Al, Ga, In; Z=S, Se): an ab initio study," Journal of Optoelectronics and Advanced Materials, vol. 16, no. 1–2, pp. 76–81, 2014.

M. Hadjab, M. Ibrir, S. Berrah, H. Abid, and M. A. Saeed, "Structural, electronic and optical properties for chalcopyrite semiconducting materials: ab-initio computational study," Optik, vol. 169, pp. 69–76, Sep. 2018.

M. I. Alonso, K. Wakita, J. Pascual, M. Garriga, and N. Yamamoto, "Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2," Physical Review B, vol. 63, no. 7, Jan. 2001, Art. no. 075203.

S. Adachi, Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors. London, UK: John Wiley & Sons, 2009.

C. F. Klingshirn, Semiconductor Optics. Berlin, Heidelberg: Springer, 2012.

M. Gajdoš, K. Hummer, G. Kresse, J. Furthmüller, and F. Bechstedt, "Linear optical properties in the projector-augmented wave methodology," Physical Review B, vol. 73, no. 4, Jan. 2006, Art. no. 045112.

A. Soni et al., "Electronic and Optical Modeling of Solar Cell Compounds CuGaSe2 and CuInSe2," Journal of Electronic Materials, vol. 40, no. 11, pp. 2197–2208, Nov. 2011.

S. Levcenko et al., "Optical spectra and energy band structure of single crystalline CuGaS2 and CuInS2," Journal of Physics: Condensed Matter, vol. 19, no. 45, Oct. 2007, Art. no. 456222.

J. C. Rife, R. N. Dexter, P. M. Bridenbaugh, and B. W. Veal, "Optical properties of the chalcopyrite semiconductors ZnGeP2, ZnGeAs2, CuGaS2, CuAlS2, CuInSe2, and AgInSe2," Physical Review B, vol. 16, no. 10, pp. 4491–4500, Nov. 1977.

M. Othman, E. Kasap, and N. Korozlu, "The structural, electronic and optical properties of InxGa1−xP alloys," Physica B: Condensed Matter, vol. 405, no. 10, pp. 2357–2361, May 2010.

A. Mouhoub, F. Khaled, and A. Bouloufa, "Performance Analysis of Ultrathin Cu(In,Ga)Se2 Solar Cells with Backwall Superstrate Configuration Using AMPS-1D," Engineering, Technology & Applied Science Research, vol. 12, no. 6, pp. 9687–9691, Dec. 2022.

N. Bouarissa and H. Aourag, "Effective masses of electrons and heavy holes in InAs, InSb, GaSb, GaAs and some of their ternary compounds," Infrared Physics & Technology, vol. 40, no. 4, pp. 343–349, Aug. 1999.

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[1]
Merabet, M., Bouchama, I., Chihi, T., Foudia, L., Saidi, F. and Bouarissa, N. 2025. Ab Initio Study of the Effect of Sulphur Concentration on the Structural, Electronic and Optical Properties of CuIn(Se1-xSx)2 Compound using Generalized Gradient Approximation. Engineering, Technology & Applied Science Research. 15, 3 (Jun. 2025), 24026–24034. DOI:https://doi.org/10.48084/etasr.10785.

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