Design and Optical Performance of a Single-Junction GaAs Nanowire-Ge Solar Cell

Authors

  • V. Sudheer Kumar Sistla Sistla Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, India
  • Surendra Kumar Bitra Astra Microwave Products Limited, India
  • Santhosh Chella Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, India
Volume: 13 | Issue: 5 | Pages: 11655-11660 | October 2023 | https://doi.org/10.48084/etasr.6121

Abstract

Solar cells are one of the most effective methods available for energy harvesting and are constructed from a variety of materials. In recent years, the use of novel materials for low-cost, high-efficiency photovoltaics has been one of the most exciting breakthroughs. This study conducted an in-depth investigation into the optical characteristics of GaAs nanowires on a Ge bottom cell. Geometric optimization of nanowires is necessary to increase solar cell performance metrics. The absorption efficiency per unit volume was considerably boosted over its traditional bulk and thin-film counterparts as a result of inherent antireflection, intensive stimulation of resonant modes, and optical antenna effects. A 3D FDTD framework was used to acquire optical properties and incorporate numerical values. Under typical AM 1.5G illumination, the diameter of GaAs nanowires was optimized to 170 nm.

Keywords:

III-V semiconductor nanowires, absorption, E&H field, FDTD, GaAs nanowire, optical simulation

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How to Cite

[1]
V. S. K. S. Sistla, S. K. Bitra, and S. Chella, “Design and Optical Performance of a Single-Junction GaAs Nanowire-Ge Solar Cell”, Eng. Technol. Appl. Sci. Res., vol. 13, no. 5, pp. 11655–11660, Oct. 2023.

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