DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology

Authors

  • Balla Lakshmi Department of Electrical, Electronics and Communication Engineering, GITAM (Deemed to be University), India
  • Gollakota Venkata Krishna Sharma Department of Electrical, Electronics and Communication Engineering, GITAM (Deemed to be University), India
Volume: 13 | Issue: 3 | Pages: 10721-10724 | June 2023 | https://doi.org/10.48084/etasr.5859

Abstract

This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. This is the first NUDA of Darlington topology designed with the 0.1µm GaAs pHEMT process with a transition frequency fT of 130GHz. Gate microstrip line sections, drain microstrip line sections, and active device sizes were optimized to obtain high gain and large bandwidth from a Monolithic Microwave Integrated Circuit (MMIC) Distributed Amplifier (DA). This paper presents two NUDA designs with different topologies. The first was designed with a three-stage Common Source (CS) topology that enhanced the bandwidth up to 34GHz with a gain greater than 8dB, and the second was designed with two Darlington stages and one CS stage that enhanced the bandwidth up to 38GHz with a gain greater than 8dB. The bandwidth enhancement of NUDA with the Darlington topology was compared and verified with the NUDA of common source topologies.

Keywords:

Monolithic Microwave Integrated Circuit (MMIC), Distributed Amplifier (DA), pseudomorphic High Electron Mobility Transistor (pHEMT), Gallium Arsenide (GaAs), ant colony optimization, Nonuniform Distributed Amplifier (NUDA)

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How to Cite

[1]
B. Lakshmi and G. V. K. Sharma, “DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology”, Eng. Technol. Appl. Sci. Res., vol. 13, no. 3, pp. 10721–10724, Jun. 2023.

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