Circuit Design for Thermal Compensation of Avalanche Photodiode

M. T. Chughtai


It has been observed that the breakdown voltage of the avalanche photodiode (APD) changes with the change in the ambient temperature. This situation may result in a poorer signal to noise ratio and sometimes to permanent damage to the APD. In order to overcome these problems, various considerations may be taken into account, including maintaining the temperature of the APD permanently or the design of a bias system, which would be self-adjusting according to any changes in the temperature. The latter technique was adopted and the design of a bias supply is presented in this article.


APD; thermal adjustment; optoelectronics

Full Text:



Gardener, J.W, Micro sensors: Principles and Applications. Jhon Wiley & Sons, Chichester, U.K., pp 80-81, 1995.

Budtolaev A. K., Grishina T. N., Khakuashev P. E. and Chinareva I. V., Formation of guard ring of avalanche photodiode based on the InGaAs/InPheterostructure, Journal of Communications Technology and Electronics, September, Volume 62, Issue 9, pp 1078–1082, 2017.

Borreguero, E; Tang, C. K; Gran, J; More...Pons, A and Campos, J, Preliminary results of feasibility of self-calibration of silicon pn photodiodes at room temperature using temperature sensors, OpticaPura y Aplicada, Volume 51, Issue 2, pp50013:1-8, 2018.

Abdullah, S., Tan, C. H., Zhou, X., Zhang, S.,Pinel, L., Ng, Jo S., Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes, Optics Express, volume 25, Issue 26, pp33610-33616, 2017.

Chughtai M. T., Temperature Compensated Bias Supply Circuit for Photodiodes, PRZEGLĄD ELEKTROTECHNICZNY, vol 94, Iss. 10, pp 207-209, 2018.

Satharasinghe, A., Hughes-Riley, T.And Dias, T., Photodiodes embedded within electronic textiles, Scientific Reports, Volume 8, Issue 1, pp1-13, 2018.

NEC data book on Fibre Optics, Fourth Edition, , available from NEC Electronics (UK) Ltd., Reading, Berks, England. pp 270,1989 .

YueChuan Tan, RakhithaChandrasekara, Cliff Cheng, and Alexander Ling, Silicon avalanche photodiode operation and lifetime analysis for small satellites, Optics Express, Vol. 21, pp 16946-16954, 2013.

M. U. Nordsveen, C. K. Tang, J. Gran, "Demonstration of a dual-mode Si detector as a self-calibratingdevice at roomtemperature," Optics Express Volume25, pp 8459-8469, 2017.

Fossum, Eric R; Hondongwa, Donald B,A Review of the Pinned Photodiode for CCD and CMOS Image Sensors, IEEE Journal of the Electron Devices Society, Volume 2, Issue 3,pp 33-43, 2014.

Zhiwei Wu; JingshuGuo; Yuan Li; More...Yanli Zhao, Low-Noise 3-D Avalanche Photodiodes,IEEE Photonics Journal, Volume 8, Issue 4, pp 1-10, 2016.

Nishida, K, and Nakajima, M, Temperature dependence and stabilization of avalanche photodiodes. The Review of Sci. Instrum., vol.43, pp1345, 1972.

Webb, P. P., McIntyre, R. J, and Conradi, J., Properties of avalanche photodiodes. RCA Review, vol. 35, pp 234, 1974.

Kiya, K. and Hayashi, T (1984), Direct current method for extremely weak optical signal detection using avalanche photodiodes. J. Spectrose. Soc. Japan, vol. 33, pp78, 1984.

eISSN: 1792-8036     pISSN: 2241-4487