LAKSHMI, B.; SHARMA, G. V. K. DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology. Engineering, Technology & Applied Science Research, Greece, v. 13, n. 3, p. 10721–10724, 2023. DOI: 10.48084/etasr.5859. Disponível em: https://etasr.com/index.php/ETASR/article/view/5859. Acesso em: 17 jul. 2024.