Temperature Dependency of Photoelectronic Properties of Group III-V Arsenide Solar Cell

Authors

  • Md. Abdullah Al Humayun Department of EEE, Eastern University, Bangladesh
  • Masum Hossen Department of EEE, Green University of Bangladesh, Bangladesh
  • Md. Zamil Haider Department of EEE, Eastern University, Bangladesh
  • Bedir Yousif Department of Electrical Engineering, College of Engineering and Information Technology, Onaizah Colleges, Qassim, Saudi Arabia | Electrical Engineering Department, Faculty of Engineering, Kafrelsheikh University, Egypt
  • Muhammad Tajammal Chughtai Department of Electrical Engineering, College of Engineering, University of Hail, Saudi Arabia mt.chughtai@uoh.edu.sa
  • Muhammad Islam Department of Electrical Engineering, College of Engineering, Qassim University, Buraydah 51452, Saudi Arabia
  • Sheroz Khan Department of Electrical Engineering, College of Engineering and Information Technology, Onaizah Colleges, Qassim, Saudi Arabia
Volume: 14 | Issue: 2 | Pages: 13430-13436 | April 2024 | https://doi.org/10.48084/etasr.6293

Abstract

This study explores the effect of temperature on different characteristics of Solar Cells (SC) composed of a structured III-V arsenide group. The temperature dependence of the SC characteristics was investigated numerically and by simulation. In both approaches, each characteristic was compared with a conventional Si SC. InAs showed superior stability and lower temperature sensitivity, as it has a negligible decrease of 0.098 eV in the energy bandgap, while the energy bandgaps of Si, AlAs, and GaAs are 0.129, 0.186, and 0.200 eV, respectively. Moreover, with a decay rate of 81.911 mV/°K, InAs exhibited the lowest temperature sensitivity in open-circuit voltage. InAs additionally demonstrated the least increase in degradation rate, while the SC power output is still a cause of concern. AlAs, Si, and GaAs had a total accumulative gradient change of 0.162, 0.136, and 0.034% in the degradation rate, respectively, while InAs showcased the highest stability by displaying a change of only 0.008%. A comparative analysis illustrated that among these III-V arsenide compounds, InAs had a rock-bottom sensitivity to temperature changes and better temperature stability in both numerical and simulation approaches.

Keywords:

density of state, feedback level, frequency fluctuation, momentum relaxation time, laser

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References

"The Balance of Power in the Earth-Sun System," National Aeronautics and Space Administration, 2005. [Online]. Available: https://www.nasa.gov/wp-content/uploads/2015/03/135642main_balance_trifold21.pdf.

Y. Liang et al., "Co3O4 nanocrystals on graphene as a synergistic catalyst for oxygen reduction reaction," Nature Materials, vol. 10, no. 10, pp. 780–786, Oct. 2011.

"Solar Energy Source: Pros and Cons," Canadian Institute For Knowledge Development, Nov. 25, 2019. https://cikd.ca/2019/11/25/solar-energy-source-pros-and-cons/.

N. S. Lewis and D. G. Nocera, "Powering the planet: Chemical challenges in solar energy utilization," Proceedings of the National Academy of Sciences, vol. 103, no. 43, pp. 15729–15735, Oct. 2006.

P. Balling et al., "Improving the efficiency of solar cells by upconverting sunlight using field enhancement from optimized nano structures," Optical Materials, vol. 83, pp. 279–289, Sep. 2018.

K. Kumari, T. Chakrabarti, A. Jana, D. Bhattachartjee, B. Gupta, and S. K. Sarkar, "Comparative Study on Perovskite Solar Cells based on Titanium, Nickel and Cadmium doped BiFeOs active material," Optical Materials, vol. 84, pp. 681–688, Oct. 2018.

Q. H. Fan et al., "High efficiency silicon–germanium thin film solar cells using graded absorber layer," Solar Energy Materials and Solar Cells, vol. 94, no. 7, pp. 1300–1302, Jul. 2010.

S. Kaci et al., "Impact of porous SiC-doped PVA based LDS layer on electrical parameters of Si solar cells," Optical Materials, vol. 80, pp. 225–232, Jun. 2018.

C. Ji et al., "Recent Applications of Antireflection Coatings in Solar Cells," Photonics, vol. 9, no. 12, Dec. 2022, Art. no. 906.

M. S. Almomani et al., "Performance Improvement of Graded Bandgap Solar Cell via Optimization of Energy Levels Alignment in Si Quantum Dot, TiO2 Nanoparticles, and Porous Si," Photonics, vol. 9, no. 11, 2022.

Α. Μ. Mouafki, F. Bouaïcha, A. Hedibi, and A. Gueddim, "Porous Silicon Antireflective Coatings for Silicon Solar Cells," Engineering, Technology & Applied Science Research, vol. 12, no. 2, pp. 8354–8358, Apr. 2022.

S. V. Boriskina and G. Chen, "Exceeding the solar cell Shockley–Queisser limit via thermal up-conversion of low-energy photons," Optics Communications, vol. 314, pp. 71–78, Mar. 2014.

S. M. Ho, "Fabrication of Cu4SnS4 Thin Films: Α Review," Engineering, Technology & Applied Science Research, vol. 10, no. 5, pp. 6161–6164, Oct. 2020.

M. Sojoudi, R. Madatov, T. Sojoudi, and P. Farhadi, "Achieving Steady and Stable Energy from AlGaAsGaAs Solar Cells," Engineering, Technology & Applied Science Research, vol. 1, no. 6, pp. 151–154, Dec. 2011.

S. Guterman et al., "Optimized flexible cover films for improved conversion efficiency in thin film flexible solar cells," Optical Materials, vol. 79, pp. 243–246, May 2018.

S. K. Tripathy and A. Pattanaik, "Optical and electronic properties of some semiconductors from energy gaps," Optical Materials, vol. 53, pp. 123–133, Mar. 2016.

E. V. Kunitsyna et al., "Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells," Optical Materials, vol. 32, no. 12, pp. 1573–1577, Oct. 2010.

S. Takatori et al., "Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures," Optical Materials, vol. 32, no. 7, pp. 776–779, May 2010.

P. M. Lam et al., "Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells," IET Optoelectronics, vol. 9, no. 2, pp. 65–68, 2015.

A. Mahfoud, F. Mohamed, S. Mekhilef, and F. Djahli̇, "Effect of Temperature on the GaInP/GaAs Tandem Solar Cell Performances," International Journal Of Renewable Energy Research, vol. 5, no. 2, pp. 629–634, Jun. 2015.

J. Singh, Physics of Semiconductors and Their Heterostructures. New York, NY, USA: McGraw-Hill College, 1992.

M. V. Fischetti and S. E. Laux, "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFET’s," IEEE Transactions on Electron Devices, vol. 38, no. 3, pp. 650–660, Mar. 1991.

V. A. Wilkinson and A. R. Adams, "The effect of temperature and pressure on InGaAs band structure," EMIS Data Reviews Series, vol. 8, 1993.

G. Saint-Girons, A. Mereuta, G. Patriarche, J. M. Gérard, and I. Sagnes, "Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots," Optical Materials, vol. 17, no. 1, pp. 263–266, Jun. 2001.

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How to Cite

[1]
Al Humayun, M.A., Hossen, M., Haider, M.Z., Yousif, B., Chughtai, M.T., Islam, M. and Khan, S. 2024. Temperature Dependency of Photoelectronic Properties of Group III-V Arsenide Solar Cell. Engineering, Technology & Applied Science Research. 14, 2 (Apr. 2024), 13430–13436. DOI:https://doi.org/10.48084/etasr.6293.

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