Temperature Dependency of Photoelectronic Properties of Group III-V Arsenide Solar Cell


  • Md. Abdullah Al Humayun Department of EEE, Eastern University, Bangladesh
  • Masum Hossen Department of EEE, Green University of Bangladesh, Bangladesh
  • Md. Zamil Haider Department of EEE, Eastern University, Bangladesh
  • Bedir Yousif Department of Electrical Engineering, College of Engineering and Information Technology, Onaizah Colleges, Qassim, Saudi Arabia | Electrical Engineering Department, Faculty of Engineering, Kafrelsheikh University, Egypt
  • Muhammad Tajammal Chughtai Department of Electrical Engineering, College of Engineering, University of Hail, Saudi Arabia mt.chughtai@uoh.edu.sa
  • Muhammad Islam Department of Electrical Engineering, College of Engineering, Qassim University, Buraydah 51452, Saudi Arabia
  • Sheroz Khan Department of Electrical Engineering, College of Engineering and Information Technology, Onaizah Colleges, Qassim, Saudi Arabia
Volume: 14 | Issue: 2 | Pages: 13430-13436 | April 2024 | https://doi.org/10.48084/etasr.6293


This study explores the effect of temperature on different characteristics of Solar Cells (SC) composed of a structured III-V arsenide group. The temperature dependence of the SC characteristics was investigated numerically and by simulation. In both approaches, each characteristic was compared with a conventional Si SC. InAs showed superior stability and lower temperature sensitivity, as it has a negligible decrease of 0.098 eV in the energy bandgap, while the energy bandgaps of Si, AlAs, and GaAs are 0.129, 0.186, and 0.200 eV, respectively. Moreover, with a decay rate of 81.911 mV/°K, InAs exhibited the lowest temperature sensitivity in open-circuit voltage. InAs additionally demonstrated the least increase in degradation rate, while the SC power output is still a cause of concern. AlAs, Si, and GaAs had a total accumulative gradient change of 0.162, 0.136, and 0.034% in the degradation rate, respectively, while InAs showcased the highest stability by displaying a change of only 0.008%. A comparative analysis illustrated that among these III-V arsenide compounds, InAs had a rock-bottom sensitivity to temperature changes and better temperature stability in both numerical and simulation approaches.


density of state, feedback level, frequency fluctuation, momentum relaxation time, laser


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How to Cite

M. A. Al Humayun, “Temperature Dependency of Photoelectronic Properties of Group III-V Arsenide Solar Cell”, Eng. Technol. Appl. Sci. Res., vol. 14, no. 2, pp. 13430–13436, Apr. 2024.


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